Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. A study of the low-energy interference oscillations in photoreflectance of GaAsSb/GaAs quantum well structures
2. Selectively excited photoluminescence of GaAs1−xSbx/GaAs single quantum wells
3. Band-gap discontinuity in GaN0.02As0.87Sb0.11∕GaAs single-quantum wells investigated by photoreflectance spectroscopy
4. Electronic and optical properties of 1.3μm GaAsSbN∕GaAs quantum well lasers
5. Temperature dependence of photoreflectance in InAs/GaAs quantum dots
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3. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure;Applied Physics Letters;2023-04-24
4. The intra/valence-band linear and third-order nonlinear optical properties of a laser-dressed double GaAsSb/GaAs parabolic quantum well: the effect of the geometry of the well and antimony content;The European Physical Journal Plus;2023-02-11
5. Investigating the effect of position-dependent effective mass on the valence-band electronic states of GaAs/GaAsSb/GaAs parabolic quantum wells modulated by intense laser fields;Solid State Communications;2022-09
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