Band anticrossing in highly mismatched III V semiconductor alloys
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference56 articles.
1. Electronic Structures of Semiconductor Alloys
2. The influence of the Poley absorption on the inertial fall-off of the dielectric absorption
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
5. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
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