Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices-Reference-Cited by-同舟云学术

Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

Published:2011-10 Issue:7 Volume:110 Page:073105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Huang S.,Semichaevsky A. V.,Webster L.,Johnson H. T.,Goldman R. S.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3631785

Reference25 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Intermediate band solar cell with many bands: Ideal performance

3. Nanostructured photovoltaics for space power

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5. Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

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