Intermediate band formation in a δ -doped like QW superlattices of GaAs/Al x Ga 1−x As for solar cell design-Reference-Cited by-同舟云学术

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Intermediate band formation in a δ -doped like QW superlattices of GaAs/Al x Ga 1−x As for solar cell design

Published:2018-03 Issue: Volume:115 Page:191-196
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Del Río-De Santiago A.,Martínez-Orozco J.C.,Rodríguez-Magdaleno K.A.,Contreras-Solorio D.A.,Rodríguez-Vargas I.,Ungan F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference45 articles.

1. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Phys. Rev. Lett.,1997

2. Detailed balance limit of efficiency of p-n junction solar cells;Shockley;J. Appl. Phys.,1961

3. Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells;Beattie;ACS Photonics,2017

4. Theoretical band alignment in an intermediate band chalcopyrite based material;Castellanos-Águila;Appl. Surf. Sci.,2017

5. Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells;Kim;Appl. Phys. Lett.,2017

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