Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665639
Reference25 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Unusual properties of the fundamental band gap of InN
3. Optical bandgap energy of wurtzite InN
4. Improvement on epitaxial grown of InN by migration enhanced epitaxy
5. Correlation between the gap energy and size of single InAs quantum dots on GaAs(001) studied by scanning tunneling spectroscopy
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3. Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates;Japanese Journal of Applied Physics;2019-05-22
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