Oblique angle deposited InN quantum dots array for infrared detection
Author:
Funder
BRNS (DAE), Govt. of India
CSIR, Govt. of India
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference32 articles.
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3. Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals;Hsieh;J. Mater. Chem.,2010
4. Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE;Meissner;Phys. Status Solidi C,2009
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1. Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection;ACS Applied Electronic Materials;2021-09-15
2. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures;Light: Science & Applications;2021-07-20
3. Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique;Functional Materials Letters;2021-05-27
4. Effects of NH3 Flow Rate on the Growth Mechanism and Optical Properties of InN Crystallites Fabricated by Chemical Vapor Deposition;Crystal Growth & Design;2020-07-13
5. Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows;Frontiers in Materials;2020-06-10
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