Self-assembled InN quantum dots grown on AlN/Si(111) and GaN/Al2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski–Krastanow mode-Reference-Cited by-同舟云学术

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Self-assembled InN quantum dots grown on AlN/Si(111) and GaN/Al2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski–Krastanow mode

Published:2006-01 Issue:1-2 Volume:494 Page:79-83
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Shen C.-H.,Lin H.-W.,Lee H.-M.,Wu C.-L.,Hsu J.-T.,Gwo S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Unusual properties of the fundamental band gap of InN

3. Optical bandgap energy of wurtzite InN

4. Effects of film polarities on InN growth by molecular-beam epitaxy

5. Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of InN quantum dots for optoelectronic applications;Optik;2018-11

2. Oblique angle deposited InN quantum dots array for infrared detection;Journal of Alloys and Compounds;2018-10

3. Energy structure and radiative lifetimes of InxGa1−xN/AlN quantum dots;Superlattices and Microstructures;2018-01

4. Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering;Rare Metal Materials and Engineering;2018-01

5. Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique;Nanoscale Research Letters;2016-05-04

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