Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering-Reference-Cited by-同舟云学术

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Band Gap and Raman Shift of InN Grown on Si (100) by Radio-Frequency Sputtering

Published:2018-01 Issue:1 Volume:47 Page:69-74
ISSN:1875-5372
Container-title:Rare Metal Materials and Engineering
language:en
Short-container-title:Rare Metal Materials and Engineering

Author:

Xuewen Wang,Tingting Li,Xingxing Su,Zhaoke Wu,Chunxue Zhai,Feng Hu,Zhiyong Zhang,Wu Zhao

Funder

National Natural Science Foundation of China

Natural Science Foundation of Education Commission of Shaanxi Province

Publisher

Elsevier BV

Subject

General Medicine

Reference30 articles.

1. Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

2. The properties of direct current sputtering deposited InN thin films under different gas flow rates

3. Effect of annealing temperature on IR-detectors based on InN nanostructures

4. Self-assembled InN quantum dots grown on AlN/Si(111) and GaN/Al2O3(0001) by plasma-assisted molecular-beam epitaxy under Stranski–Krastanow mode

5. Metastable nature of InN and In-rich InGaN alloys

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