Effect of annealing temperature on IR-detectors based on InN nanostructures
Author:
Funder
Universiti Sains Malaysia
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference15 articles.
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2. Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique;Functional Materials Letters;2021-05-27
3. Preparation and characterization of InN NPs by laser ablation in ammonium solution;2ND INTERNATIONAL CONFERENCE ON MATERIALS ENGINEERING & SCIENCE (IConMEAS 2019);2020
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