InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES-Reference-Cited by-同舟云学术

InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

Published:2012-12-04 Issue:31 Volume:26 Page:1250137
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

AMIRHOSEINY M.¹,HASSAN Z.¹,NG S. S.¹,CHUAH L. S.¹,AHMAD M. A.¹,YUSOF Y.¹

Affiliation:

1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979212501378

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