Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system-Reference-Cited by-同舟云学术

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Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Published:1997-03 Issue: Volume:112 Page:98-101
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

McIntosh F.G,Piner E.L,Roberts J.C,Behbehani M.K,Aumer M.E,El-Masry N.A,Bedair S.M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. N. Yoshimoto, T. Matsuoka, T. Sassaki and A. Katsui, Appl. Phys. Lett. 59 (1991) 2251.

2. A. Dissanayake, J.Y. Lin, H.X. Jiang, Z.J. Yu and J.H. Edgar, Appl. Phys. Lett. 65 (1994) 2317.

3. H. Amano, N. Sawahi, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48 (1986) 353.

4. N.H. Karam, T. Parados, W. Rowland, J. Schetzina, N. El-Masry and S.M. Bedair, Appl. Phys. Lett. 67 (1995) 94.

5. S.M. Bedair, M.A. Tischler, T. Katsuyama and N. El-Masry, Appl. Phys. Lett. 47 (1985) 51.

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