Influence of sputtering power and Ar–N2 flow on the structure and optical properties of indium nitride films prepared by magnetron sputtering
Author:
Affiliation:
1. Department of Physics, GC University, Lahore, Pakistan
2. Centre for advanced Studies in Physics, GC University, Lahore, Pakistan
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1663190
Reference48 articles.
1. InN, latest development and a review of the band-gap controversy
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3. Transient electron transport in wurtzite GaN, InN, and AlN
4. Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
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