Electrochromic properties of InON thin films prepared by DC magnetron sputtering-Reference-Cited by-同舟云学术

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Electrochromic properties of InON thin films prepared by DC magnetron sputtering

Published:2024-02-07 Issue:3 Volume:130 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Chen Jiahao,Ji Xuemei,Su Jiangbin^ORCID,He Zuming,Tang Bin

Funder

Natural Science Foundation of Jiangsu Province

Innovative Research Group Project of the National Natural Science Foundation of China

Research and Innovation Program for Graduate Students of Jiangsu Province

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s00339-024-07316-x.pdf

Reference35 articles.

1. M. Sparvoli, R.D. Mansano, J.F.D. Chubaci, Study of indium nitride and indium oxynitride band gaps[J]. Mater. Res. 16(4), 850–852 (2013)

2. X.H. Zhao, H.T. Li, S.W. Jiang et al., Effect of nitrogen doping on the thermoelectric properties of ITO-In2O3 thin film thermocouples[J]. Thin Solid Films 629, 1–5 (2017)

3. A. Sungthong, P. Khomdet, S. Porntheeraphat et al., Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering. Adv. Mater. Res. 93–94, 443–446 (2010)

4. H.D. Kim, J.H. Kim, K. Park et al., Highly stable thin-film transistors based on indium oxynitride semiconductor. ACS Appl. Mater. Interfaces 10(18), 15873–15879 (2018)

5. S. Yamaguchi, R. Izaki, N. Kaiwa et al., Fabrication of thermoelectric devices using AlInN and InON films prepared by reactive radio-frequency sputtering. MRS Proc. 798, 119–123 (2003)

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