InN, latest development and a review of the band-gap controversy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference161 articles.
1. Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride
2. InN, an Historic review — from obscurity to controversy;Butcher,2004
3. Electrical and Optical Properties of rf‐Sputtered GaN and InN
4. Electron mobility in indium nitride
5. Indium nitride (InN): A review on growth, characterization, and properties
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