Porous Si(111) and Si(100) as an intermediate buffer layer for nanocrystalline InN films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference20 articles.
1. Growth temperature dependences of InN films grown by MOCVD
2. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates
3. Shortest wavelength semiconductor laser diode
4. Electron transport in wurtzite indium nitride
5. MOVPE growth and characterization of InN/GaN single and multi-quantum well structures
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