Growth temperature dependences of InN films grown by MOCVD-Reference-Cited by-同舟云学术

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Growth temperature dependences of InN films grown by MOCVD

Published:2008-12 Issue:5 Volume:255 Page:3149-3152
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yang Cuibai,Wang Xiaoliang,Xiao Hongling,Zhang Xiaobin,Hu Guoxin,Ran Junxue,Wang Cuimei,Li Jianping,Li Jinmin,Wang Zhanguo

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Progress and prospects of group-III nitride semiconductors

3. Unusual properties of the fundamental band gap of InN

4. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

5. Growth and characterization of InN on sapphire substrate by RF-MBE

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sonochemical Synthesis of Indium Nitride Nanoparticles and Photocatalytic Composites with Titania;Ceramics;2024-03-27

2. Effects of the growth parameters on the surface quality of InN films;Journal of Vacuum Science & Technology A;2024-01-01

3. Electron transport properties in thin InN layers grown on InAlN;Materials Science in Semiconductor Processing;2023-03

4. Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition;Applied Physics Letters;2020-08-31

5. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26

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