Growth and characterization of InN on sapphire substrate by RF-MBE-Reference-Cited by-同舟云学术

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Growth and characterization of InN on sapphire substrate by RF-MBE

Published:2005-04 Issue:3-4 Volume:276 Page:401-406
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xiao Hongling,Wang Xiaoliang,Wang Junxi,Zhang Nanhong,Liu Hongxin,Zeng Yiping,Li Jinmin,Wang Zhanguo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

2. Optical and electrical properties of InN grown by radio-frequency reactive sputtering

3. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

4. Effects of the narrow band gap on the properties of InN

5. Transient electron transport in wurtzite GaN, InN, and AlN

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1. Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS;Key Engineering Materials;2019-09

2. Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method;Solid State Phenomena;2019-04

3. Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures;Optics Express;2018-10-18

4. Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates;Journal of Electronic Materials;2018-05-22

5. Study of InN thin film for pulse oximeter application;Latin America Optics and Photonics Conference;2018

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