Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition-Reference-Cited by-同舟云学术

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Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition

Published:2020-08-31 Issue:9 Volume:117 Page:093101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hsu Chih-Wei¹^ORCID,Deminskyi Petro¹^ORCID,Martinovic Ivan¹^ORCID,Ivanov Ivan G.¹^ORCID,Palisaitis Justinas¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden

Funder

Knut och Alice Wallenbergs Stiftelse

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Carl Tryggers Stiftelse för Vetenskaplig Forskning

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0014900

Reference33 articles.

1. Unusual properties of the fundamental band gap of InN

2. InN: A material with photovoltaic promise and challenges

3. An analytical model of low field and high field electron mobility in wurtzite indium nitride

4. Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel

5. Proposal of High-Electron Mobility Transistors With Strained InN Channel

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1. Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer;Crystal Growth & Design;2024-07-09

2. Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth;ACS Nano;2024-01-09

3. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024

4. Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys;Crystal Growth & Design;2023-09-19

5. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-07-10

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