Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=2/a=024302/pdf
Reference31 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
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3. GaN-Based RF Power Devices and Amplifiers
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4. Structure and Electronic Properties of 2D GaN/Al x Ga 1− x N 2D/3D Heterostructure Controlled by Al Components and Interlayer Distance;physica status solidi (RRL) – Rapid Research Letters;2022-07-13
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