Polarization induced 2D hole gas in GaN/AlGaN heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Polarization-enhanced Mg doping of AlGaN/GaN superlattices
2. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
3. Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices
4. Two-dimensional hole gas induced by piezoelectric and pyroelectric charges
5. Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
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2. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*;Chinese Physics B;2021-08-01
3. Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors;IEEE Electron Device Letters;2017-08
4. Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure;Applied Physics Letters;2017-04-17
5. Performance Enhancement of Blue InGaN Light-Emitting Diodes with P-GaN/InGaN SPS Last Barrier and P-AlGaN/GaN SPS EBL;ECS Journal of Solid State Science and Technology;2016
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