Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123897
Reference14 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
3. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
4. Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces
5. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
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