Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1−xN interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121827
Reference12 articles.
1. Towards the Identification of the Dominant Donor in GaN
2. Pressure Induced Deep Gap State of Oxygen in GaN
3. Reconstructions of theGaN(0001¯)Surface
4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
5. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
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