Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4980140
Reference18 articles.
1. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology
3. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
4. Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics
5. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
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1. Polarization-Induced 2D Electron and Holes in Undoped AlN/GaN/AlN Heterostructures;Springer Theses;2022
2. Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT;AIP Advances;2021-05-01
3. Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II;IEEE Transactions on Electron Devices;2021-01
4. Suppression technique of vertical leakage current in GaN-on-Si power transistors;Japanese Journal of Applied Physics;2019-05-20
5. Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs;IEEE Transactions on Electron Devices;2018-05
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