Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT-Reference-Cited by-同舟云学术

Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT

Published:2021-05-01 Issue:5 Volume:11 Page:055101
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sun Jinming¹^ORCID,Haeberlen Oliver²^ORCID,Ostermaier Clemens²,Prechtl Gerhard²,Tadikonda Ramakrishna³^ORCID,Persson Eric¹,Garg Reenu⁴,Imam Mohamed¹,Khalil Sameh¹,Charles Alain⁵

Affiliation:

1. Infineon Technologies Americas Corp., El Segundo, California 90245, USA

2. Infineon Technologies, Siemensstraße, 29500 Villach, Austria

3. Renesas Electronics America, Inc., Tempe, Arizona 85264, USA

4. Microchip Technologies, Chandler, Arizona 85224, USA

5. ABCs World Consulting, Manhattan Beach, California 90266, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049319

Reference19 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. G. Longobardi, in Semiconductor Conference (CAS), 2017 International (IEEE, 2017), pp. 11–18.

3. Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

4. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

5. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

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