Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors
Author:
Affiliation:
1. Center for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
2. NXP Semiconductors, Bramhall Moor Lane, Hazel Grove, Stockport SK7 5BJ, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Technology Strategy Board (TSB)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4885695
Reference15 articles.
1. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
2. Carbon impurities and the yellow luminescence in GaN
3. AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
4. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
5. Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths
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