Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Published:2004 Issue:3 Volume:22 Page:1145
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Poblenz C.,Waltereit P.,Rajan S.,Heikman S.,Mishra U. K.,Speck J. S.

Publisher

American Vacuum Society

Subject

General Engineering

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