Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN-Reference-Cited by-同舟云学术

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Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN

Published:2024-08 Issue: Volume:40 Page:109586
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ye Li,Liang Yongchao

Publisher

Elsevier BV

Reference59 articles.

1. 2D materials beyond graphene for high-performance energy storage applications;Zhang;Adv. Energy Mater.,2016

2. Crested 2D materials for optoelectronics and photonics;Luo;Prog. Quantum Electron.,2022

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotech,2012

4. Functionalized graphene and other two-dimensional materials for photovoltaic devices: device design and processing;Liu;Chem. Soc. Rev.,2015

5. Inversion symmetry and exotic interlayer exciton behavior in twisted trilayer MoS2 produced by vapor deposition;Liu;ACS Appl. Mater. Interfaces,2023

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