Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection-Reference-Cited by-同舟云学术

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Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection

Published:2021-09-15 Issue:9 Volume:3 Page:4243-4253
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chowdhury Arun Malla¹²^ORCID,Singh Deependra Kumar¹^ORCID,Roul Basanta¹³,Nanda K. K.¹^ORCID,Krupanidhi S. B.¹^ORCID

Affiliation:

1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

2. Department of Physics, Syamsundar College, University of Burdwan, East Bardhaman, West Bengal 713424, India

3. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00695

Reference85 articles.

1. High-performance self-powered UV-Vis-NIR photodetectors based on horizontally aligned GaN microwire array/Si heterojunctions

2. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

3. Self-powered, visible-light photodetector based on thermally reduced graphene oxide–ZnO (rGO–ZnO) hybrid nanostructure

4. Colloidal chemically fabricated ZnO : Cu-based photodetector with extended UV-visible detection waveband

5. High-Performance Hybrid Phenyl-C61-Butyric Acid Methyl Ester/Cd3P2 Nanowire Ultraviolet–Visible–Near Infrared Photodetectors

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1. Self-Powered Photodetectors Based on InGaN/PdO PN Heterojunctions for Visible Light Communication;IEEE Electron Device Letters;2024-07

2. Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed;Advanced Electronic Materials;2023-01-29

3. The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films;Applied Physics A;2023-01-16

4. Trimetallic oxide-hydroxide porous nanosheets for efficient water oxidation;Chemical Engineering Journal;2022-05

5. Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate;Materials Advances;2022

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