Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows
Author:
Publisher
Frontiers Media SA
Subject
Materials Science (miscellaneous)
Reference24 articles.
1. N-face (0001) GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy;Akasaka;Appl. Phys. Exp.,2018
2. Characterization of InN films prepared using magnetron sputtering at variable power;Anjum;Mater. Lett,2018
3. Structural, electrical and optical properties of sputtered-grown InN films on ZnO buffered silicon, bulk GaN, quartz and sapphire substrates;Bashir;J. Electr. Mater,2018
4. Self-assembled InN quantum dots on side facets of GaN nanowires;Bi;J. Appl. Phys,2018
5. InN layers grown by MOCVD on a-Plane Al2O3;Buzynin;Phys. Status Solidi,2018
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides;2D Materials;2022-02-24
2. Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate;Coatings;2022-01-26
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