Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance-Reference-Cited by-同舟云学术

Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance

Published:2010-05-10 Issue:19 Volume:96 Page:192904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ren H.,Cheng S. L.,Nishi Y.,Shohet J. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3430570

Reference20 articles.

1. Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge

2. Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher

3. Monte Carlo simulation of the effects of vacuum-ultraviolet radiation on dielectric materials

4. Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si

5. Paramagnetic defects in annealed ultrathin layers of SiOx, Al2O3, and ZrO2 on (100)Si

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