Paramagnetic defects in annealed ultrathin layers of SiOx, Al2O3, and ZrO2 on (100)Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1787152
Reference26 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Charge trapping in very thin high-permittivity gate dielectric layers
3. Evidence for hole and electron trapping in plasma deposited ZrO2 thin films
4. Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon
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