Reduction of ∙Si≡Si 3 defect density at the Si/SiO 2 interface by sol-gel SiO 2 thin film passivation-Reference-Cited by-同舟云学术

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Reduction of ∙Si≡Si 3 defect density at the Si/SiO 2 interface by sol-gel SiO 2 thin film passivation

Published:2017-06 Issue: Volume:632 Page:134-140
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Oh Sehyun,Lee Seunghyo,Oh Eunseok,Lim Sangwoo

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Wet-chemical passivation and characterization of silicon interfaces for solar cell applications;Angermann;Sol. Energy Mater. Sol. Cells,2004

2. High efficiency solar cells combining a perovskite and a silicon heterojunction solar cells via an optical splitting system;Uzu;Appl. Phys. Lett.,2015

3. Advances in surface passivation and emitter optimization techniques of c-Si solar cells;Rahman;Renew. Sust. Energ. Rev.,2014

4. What can electron paramagnetic resonance tell us about the Si/SiO2 system?;Lenahan;J. Vac. Sci. Technol. B,1998

5. A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source;Sarikov;Thin Solid Films,2010

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1. Effect of dissolved oxygen on surface oxidation and dissolution of InGaAs and its impact on AsGa, AsIn, and VAs defect generation;Materials Science in Semiconductor Processing;2023-10

2. Improvement of Si3N4/SiO2 etching selectivity through the passivation of SiO2 surface in aromatic carboxylic acid-added H3PO4 solutions for the 3D NAND integration;Applied Surface Science;2023-05

3. Phosphoric acid-peroxide mixture surface preparation for the improvement of InGaAs channel characteristics;Journal of Industrial and Engineering Chemistry;2021-10

4. Effects of chamber pressure on the hydrogenated amorphous silicon thin film by microwave annealing;2019 Compound Semiconductor Week (CSW);2019-05

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