Funder
Special Project Foundation of China Academy of Engineering Physics (grant no. CAEP 9100204)
Reference15 articles.
1. Hydrogen-induced thermal interface degradation in (111)Si/SiO2 revealed by electron-spin resonance;Afanas׳ev;Appl. Phys. Lett.,1998
2. Demonstration of a 4H SiC betavoltaic cell;Chandrashekhar;Appl. Phys. Lett.,2006
3. The structure of SiO2, its defects and radiation hardness;Devine;IEEE Trans. Nucl. Sci.,1994
4. Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation;Fukata;Appl. Phys. Lett.,2007
5. Model for radiation-induced charge trapping and annealing in the oxide layer of MOS devices;Gwyn;J. Appl. Phys.,1969
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