Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2952826
Reference15 articles.
1. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces
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3. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
4. III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics
5. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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