Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition
Author:
Affiliation:
1. Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, United States
2. Department of Physics, Astronomy and Materials Science, Missouri State University, Springfield, Missouri 65897, United States
Funder
Army Research Office
Division of Electrical, Communications and Cyber Systems
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b05601
Reference51 articles.
1. Probing the Dielectric Properties of Ultrathin Al/Al2O3/Al Trilayers Fabricated Using in Situ Sputtering and Atomic Layer Deposition
2. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
3. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers
4. Atomically Thin Al2O3 Films for Tunnel Junctions
5. Probing the Nucleation of $\hbox{Al}_{2}\hbox{O}_{3}$ in Atomic Layer Deposition on Aluminum for Ultrathin Tunneling Barriers in Josephson Junctions
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