In vacuo atomic layer deposition and electron tunneling characterization of ultrathin dielectric films for metal/insulator/metal tunnel junctions-Reference-Cited by-同舟云学术

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In vacuo atomic layer deposition and electron tunneling characterization of ultrathin dielectric films for metal/insulator/metal tunnel junctions

Published:2020-07 Issue:4 Volume:38 Page:040802
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Wu Judy Z.¹,Acharya Jagaran¹,Goul Ryan¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045

Funder

National Science Foundation

Army Research Office

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5141078

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing electronic and dielectric properties of ultrathin Ga2O3/Al2O3 atomic layer stacks made with in vacuo atomic layer deposition;Journal of Applied Physics;2024-07-10

2. Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al₂O₃/MgO memristors;Nano Express;2024-04-01

3. Structure and Electrical Properties of Zirconium-Aluminum-Oxide Films Engineered by Atomic Layer Deposition;Coatings;2022-03-23

4. Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects;Nanomaterials;2022-02-16

5. Cryogenic Electronics and Quantum Information Processing;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11

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