Searching Optimal Growth Parameters for HfO₂ Applied by Plasma-Enhanced Atomic Layer Deposition Method-Reference-Cited by-同舟云学术

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Searching Optimal Growth Parameters for HfO₂ Applied by Plasma-Enhanced Atomic Layer Deposition Method

Published:2022-06-30 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Krasnova Irina A.¹,Gorshkov Dmitry V.¹,Zakirov Evgeny R.²,Sidorov Georgiy Yu.²,Sabinina Irina V.²

Affiliation:

1. Novosibirsk State University Rzhanov Institute of Semiconductor,Physics SB RAS,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor,Physics SB RAS,Novosibirsk,Russia

Funder

Russian Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855104.pdf?arnumber=9855104

Reference17 articles.

1. Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers

2. Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

3. Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma

4. Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

5. Plasma and Thermal ALD of Al[sub 2]O[sub 3] in a Commercial 200 mm ALD Reactor

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