Admittance measurements in the temperature range (8−77) K for characterization of MIS structures based on MBE n -Hg 0.78 Cd 0.22 Te with and without graded-gap layers

Author:

Voitsekhovskii A.V.,Nesmelov S.N.,Dzyadukh S.M.

Funder

RFBR, Russia

Administration of Tomsk region

Tomsk State University Academic D.I. Mendeleev Fund Program

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference35 articles.

1. A.Rogalski, Infrared Detectors, 2nd. ed., CRC Press, Taylor & Francis Group, New York, 2011.

2. Mercury Cadmium Telluride: Growth, Properties and Applications;Capper,2011

3. Sources of carrier compensation in arsenic-doped HgCdTe

4. Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates

5. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

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