Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
Author:
Affiliation:
1. School of Molecular Sciences, Arizona State University, Tempe, Arizona 85287-1604, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
Funder
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4956439
Reference42 articles.
1. Ge–Sn semiconductors for band-gap and lattice engineering
2. Si‐Ge‐Metal Ternary Phase Diagram Calculations
3. Influence of the composition fluctuations and decomposition on the tunable direct gap and oscillator strength of Ge1-xSnx alloys
4. Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
5. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
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