PECVD Processing of low bandgap-energy amorphous hydrogenated germanium-tin (a-GeSn:H) films for opto-electronic applications

Author:

de Vrijer ThierryORCID,Roodenburg Koos,Saitta Federica,Blackstone Thijs,Limodio Gianluca,Smets Arno H.M.

Publisher

Elsevier BV

Subject

General Materials Science

Reference48 articles.

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3. Systematic study of gesn heterostructure-based light-emitting diodes towards mid-infrared applications;Zhou;J. Appl. Phys.,2016

4. Direct gap ge1-ysnyalloys: fabrication and design of mid-IR photodiodes;Senaratne;J. Appl. Phys.,2016

5. Characterization of Sigesn for Use as a 1 Ev Sub-cell in Multi-junction Solar Cells;Pearce,2018

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1. DIrect Sunlight into CO conversion;2022 IEEE 49th Photovoltaics Specialists Conference (PVSC);2022-06-05

2. Opto‐Electrical Properties of Group IV Alloys: The Inherent Challenges of Processing Hydrogenated Germanium;Advanced Science;2022-05-06

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