Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804675
Reference20 articles.
1. Silicon-based optoelectronics
2. Direct and indirect band gap room temperature electroluminescence of Ge diodes
3. 1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates
4. An electrically pumped germanium laser
5. Deformation potential constants of biaxially tensile stressedGeepitaxial films onSi(100)
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