Direct and indirect band gap room temperature electroluminescence of Ge diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3462400
Reference28 articles.
1. An all-silicon Raman laser
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4. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
5. Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
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