1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767138
Reference18 articles.
1. Ge-on-Si laser operating at room temperature
2. Silicon photonics: a bright future?
3. Direct-gap optical gain of Ge on Si at room temperature
4. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
5. Direct and indirect band gap room temperature electroluminescence of Ge diodes
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