Characterization of electron traps in SiO2as influenced by processing parameters
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329259
Reference12 articles.
1. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
2. The Effects of Processing on Hot Electron Trapping in SiO2
3. Avalanche Injection Effects in MIS Structures and Realization of N-Channel Enhancement Type MOS FETS
4. Electron trapping in SiO2 at 295 and 77 °K
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