Electron trapping in SiO2 at 295 and 77 °K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325727
Reference10 articles.
1. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
2. Avalanche Injection Effects in MIS Structures and Realization of N-Channel Enhancement Type MOS FETS
3. Optically induced injection of hot electrons into SiO2
4. The Effects of Processing on Hot Electron Trapping in SiO2
5. Capture of electrons into Na+‐related trapping sites in the SiO2layer of MOS structures at 77 °K
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