The Effects of Processing on Hot Electron Trapping in SiO2-Reference-Cited by-同舟云学术

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The Effects of Processing on Hot Electron Trapping in SiO2

Published:1976-01-01 Issue:1 Volume:123 Page:42-47
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Gdula R. A.¹

Affiliation:

1. IBM System Products Division, East Fishkill Facility, Hopewell Junction, New York 12533

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2132762/pdf

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1. Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors;ACS Applied Materials & Interfaces;2014-10-14

2. Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures;Bias Temperature Instability for Devices and Circuits;2013-09-10

3. References;Internal Photoemission Spectroscopy;2008

4. Si-SiO2 Interface, Electronic Properties;digital Encyclopedia of Applied Physics;2003-04-15

5. Electrical properties of ultrathin oxide grown by high pressure oxidation and N2O nitridation for ULSI device applications;International Journal of Electronics;2001-04

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