Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors-Reference-Cited by-同舟云学术

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Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors

Published:2014-10-14 Issue:21 Volume:6 Page:18693-18703
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Je So Yeon¹,Son Byeong-Geun¹,Kim Hyun-Gwan²,Park Man-Young²,Do Lee-Mi³,Choi Rino¹,Jeong Jae Kyeong¹

Affiliation:

1. Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea

2. Research Center for Nano-Materials, DNF Co. Ltd., Daejeon 306-802, Korea

3. IT Convergence Technology Research Department , Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am504231h

Reference66 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

5. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

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