Effects of postmetallization annealing on ultrathin SiO2 layer properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1482147
Reference17 articles.
1. Interface state behaviour of plasma grown oxides following low temperature annealing
2. Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation
3. Characterization of electron traps in SiO2as influenced by processing parameters
4. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
5. Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon
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