Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

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Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

Published:2008-11 Issue:9 Volume:104 Page:094505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rumyantsev S. L.,Shur M. S.,Levinshtein M. E.,Ivanov P. A.,Palmour J. W.,Das M. K.,Hull B. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3009664

Reference26 articles.

1. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

2. 4H-SiC RF power MOSFETs

3. Design and Fabrication of 4H-SiC RF MOSFETs

4. Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics

5. On the flicker noise in submicron silicon MOSFETs

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1. The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

2. Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs;IEEE Transactions on Electron Devices;2023-06

3. Electrically Active Defects in SiC Power MOSFETs;Energies;2023-02-10

4. Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-12

5. Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors;Electronics;2022-09-25

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