The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices-Reference-Cited by-同舟云学术

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The Influence of Total Dose Irradiation and Annealing Experiments on Three Types of SiC Power Devices

Published:2023-08-08 Issue: Volume: Page:1-7
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Jiang Jie¹,Hu Shengdong¹,Shi Yijun²,Cheng Liye²,He Zhiyuan²,Xiao Qingzhong²,Zeng Wei¹,Wu Hao³,Hui Caixin²

Affiliation:

1. Chongqing University,School of Microelectronics and Communication Engineering,Chongqing,China

2. China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China

3. Science and Technology on Analog Integrated Circuit Laboratory,Chongqing,China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10491949.pdf?arnumber=10491949

Reference34 articles.

1. Power Semiconductors development trends

2. Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

3. SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability

4. 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

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